Thermal evolution of the interface: Formation of epitaxial Gd silicide

Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids

M. P. Seah, W. A. Dench · Surface and Interface Analysis · 1979 · 5.2K citations

Quantitative Electron Spectroscopy, Engineering, Electron Diffraction +19

Practical surface analysis by auger and X-ray photoelectron spectroscopy

P. Oelhafen · Journal of Electron Spectroscopy and Related Phenomena · 1984 · 2.5K citations

Materials Science, Surface Characterization, Engineering +6

Chemical shifts of Auger lines, and the Auger parameter

C. D. Wagner · Faraday Discussions of the Chemical Society · 1975 · 797 citations

Engineering, Chemistry, Electronic Excited State +19

Low Schottky barrier of rare-earth silicide on <i>n</i>-Si

K. N. Tu, R. D. Thompson, B-Y. Tsaur · Applied Physics Letters · 1981 · 353 citations

Semiconductors, Materials Science, Passivation Coating +12

Epitaxial growth of rare-earth silicides on (111) Si

J. A. Knapp, S. T. Picraux · Applied Physics Letters · 1986 · 272 citations

Materials Engineering, Materials Science, Engineering +12