Tantalum nitride thin film resistors for integration into copper metallization based RF-CMOS and BiCMOS technology platforms

Rashaunda Henderson, P. Zürcher, A. Duvallet, C. Happ, M. Petras, M. Raymond, T. Remmel, David J. Roberts, B. Steimle, S. Straub,

2002 · 13 citations · 0 references

Concepts

Abstract

Metal thin film resistors have been integrated into a damascene-copper multilayer metallization system for mixed-signal BiCMOS technology platforms. The thin film process can be adjusted to achieve resistors with very low temperature coefficients, high linearity, low noise, and improved matching as compared to resistors based on implanted silicon or polysilicon processing. In addition, improvement in terms of good RF performance was observed.