Empirical power MOSFET modeling: practical characterization and simulation implantation

Abstract

This study deals with power MOSFET models. Parasitic capacitors are one of the main parameters for dynamic models, and have a critical influence on switching waveforms and switching losses. Most of classical models consider that these capacitors are one-voltage dependent. The aim of this paper is to present a new insight based on a physical structure analysis of charge locations and moves and electrical waveforms, both during switching transitions. Establishment of the model with respect to critical voltage changes is presented, and results are compared with experimental curves. This model appears to be more accurate and more reliable than PSPICE or manufacturer original models.