Applied Physics Letters · 1998 · 135 citations · 26 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum WellsSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsAuger DecayBand Structure CalculationOptical Gain In SemiconductorsPhotonic Band StructureQuantum Well GainQuantum Well LasersQuantum Well StructuresType-ii Quantum Wells
Two different approaches, a photoconductive response technique and a correlation of lasing thresholds with theoretical threshold carrier concentrations have been used to determine Auger lifetimes in InAs/GaInSb quantum wells. For energy gaps corresponding to 3.1–4.8 μm, the room-temperature Auger coefficients for seven different samples are found to be nearly an order-of-magnitude lower than typical type-I results for the same wavelength. The data imply that at this temperature, the Auger rate is relatively insensitive to details of the band structure.
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Near-room-temperature mid-infrared interband cascade laser
L. J. Olafsen, E. H. Aifer, I. Vurgaftman et al. · Applied Physics Letters · 1998 · 116 citations
Engineering, Electrical Engineering, Electronic Materials +15
Midwave infrared stimulated emission from a GaInSb/InAs superlattice
R. H. Miles, D. H. Chow, Y.-H. Zhang et al. · Applied Physics Letters · 1995 · 86 citations