IEEE Journal of Quantum Electronics · 1997 · 70 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsQuantum WellsSemiconductor Device MaterialsSemiconductor LasersSemiconductor PhysicsBarrier LayersHigh-power Semiconductor LasersQuantum Well GainQuantum Well Laser DiodesQuantum Well LasersQuantum Well Structures
Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-/spl mu/m diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-/spl mu/m devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.
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Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasers
H. Lee, P. K. York, R. Menna et al. · Applied Physics Letters · 1995 · 80 citations