Applied Physics Letters · 1998 · 132 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsLaser DiodesLaser PhysicsQuantum WellsSemiconductor HeterostructuresSemiconductor LasersStrain EngineeringDiode Laser Threshold CurrentInternal Quantum EfficiencyLow-threshold Current LasersMolecular Beam EpitaxyQuantum EfficiencySemiconductor Laser DiodesStrained Quantum WellsThreshold Behavior
Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture.
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