A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications

Abstract

We present IBM's next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.