High Q inductors and capacitors on Si substrate

Abstract

In this paper, the impact of conventional silicon technology parameters on the characteristics of passives is studied. For both inductors and capacitors, cost-effective modules, which integrate easily into wiring BEOL (back-end of line) in a conventional silicon technology and provide high Q factor components are presented. For an inductor of 3 nH, designed for 2 GHz frequency applications, and fabricated in thick Cu as an add-on module, Q factor of /spl sim/24 is reached. The metal insulator metal (MIM) capacitor module with outstanding RF performances and a Q factor ranging from 100-1000 in the few GHz frequency range is developed in the Al BEOL. Compact lumped element SPICE models for both components are proposed and verified.