Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 10<sup>16</sup> endurance

Abstract

In this work, we report a one-transistor (1T) versatile memory; the memory transistor characteristics achieve sub-60-mV/dec operation and considerably low off-state leakage of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−15</sup> A/µm at a supply voltage below 0.5V. The versatile memory features DRAM/NVM functions of large ΔV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> window of 2.8V, fast 20-ns speed, 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> s retention at 85°C, and long extrapolated 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> endurance at 85°C, which show the potential for 3D memory application with severe requirement on both high density and low power consumption.