Wear-leveling Reliability
Wear-Leveling Reliability is a metric that quantifies the effectiveness and consistency of wear-leveling algorithms in uniformly distributing program and erase cycles across flash memory blocks to prevent premature wear-out of specific cells, thereby extending the operational lifespan of non-volatile storage systems.
15
Publications
669
Citations
54
Authors
32
Institutions
Publications per year
2017–2026
2
Parents
15
Increasing PCM main memory lifetime
Alexandre Ferreira, Miao Zhou, Santiago Bock et al. · 2010 · 128 citations
A group-based wear-leveling algorithm for large-capacity flash memory storage systems
Dawoon Jung, Yoon-Hee Chae, Heeseung Jo et al. · 2007 · 100 citations
Garbage collection and wear leveling for flash memory: Past and future
Ming-Chang Yang, Yu-Ming Chang, Che-Wei Tsao et al. · 2014 · 89 citations
FPGA-Based Solid-State Drive Prototyping Platform
Yu Cai, Erich F. Haratsch, Mark P. McCartney et al. · 2011 · 42 citations
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32

National Taiwan University
Taipei, Taiwan
3 h-index
7 publications
351 citations
Qualcomm (United States)
San Diego, United States
2 h-index
2 publications
130 citations
Macronix International (Taiwan)
Hsinchu, Taiwan
2 h-index
4 publications
228 citations

Pennsylvania State University
State College, United States
1 h-index
2 publications
226 citations
University of Pittsburgh
Pittsburgh, United States
1 h-index
6 publications
768 citations
Intel (United States)
Santa Clara, United States
1 h-index
1 publications
28 citations
Qualcomm (United Kingdom)
Farnborough, United Kingdom
1 h-index
1 publications
113 citations
University of Chinese Academy of Sciences
Beijing, China
1 h-index
3 publications
48 citations
1–8 of 32
1 publications · 28 citations
1
h-index
TODAES · 1 publications · 25 citations
1
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Conference · 1 publications · 17 citations
1
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TOS · 1 publications · 17 citations
1
h-index
1 publications · 16 citations
1
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1–5