Trap-assisted Conduction

Trap-Assisted Conduction is a charge transport mechanism in semiconductors wherein electron or hole current flow occurs via localized energy states within the bandgap, induced by defects or impurities, that temporarily capture and release carriers, thereby enabling conduction through a multi-step tunneling or thermal excitation process distinct from band or direct tunneling conduction.

73

Publications

3.6K

Citations

349

Authors

107

Institutions

Publications per year

2017–2026

19

Authors

349

  1. YC
    Yingchun Cheng

    King Abdullah University of Science and Technology, Saudi Arabia

    3 publications · 91 citations

    3

    h-index

  2. HK
    Hyoungsub Kim

    Sungkyunkwan University, South Korea

    2 publications · 242 citations

    2

    h-index

  3. CH
    Chih-Chieh Hsu

    National Yunlin University of Science and Technology, Taiwan

    2 publications · 31 citations

    2

    h-index

  4. HW
    Hei Wong

    City University of Hong Kong, Hong Kong SAR China

    2 publications · 29 citations

    2

    h-index

  5. MT
    Monika Tomar

    University of Delhi, India

    2 publications · 65 citations

    2

    h-index

1–5 of 349

Venues

  1. Applied Physics Letters

    13 publications · 1.2K citations

    12

    h-index

  2. Journal of Applied Physics

    11 publications · 347 citations

    11

    h-index

  3. IEEE Electron Device Letters

    6 publications · 398 citations

    6

    h-index

  4. Journal of Physics D Applied Physics

    5 publications · 183 citations

    5

    h-index

  5. IEEE Transactions on Electron Devices

    4 publications · 128 citations

    4

    h-index

1–5