Trap-assisted Conduction
Trap-Assisted Conduction is a charge transport mechanism in semiconductors wherein electron or hole current flow occurs via localized energy states within the bandgap, induced by defects or impurities, that temporarily capture and release carriers, thereby enabling conduction through a multi-step tunneling or thermal excitation process distinct from band or direct tunneling conduction.
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3.6K
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349
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107
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2017–2026
19
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Non-volatile resistive switching for advanced memory applications
An Chen, S. Haddad, Yi-Ching Wu et al. · 2006 · 183 citations
1–5 of 73
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King Abdullah University of Science and Technology, Saudi Arabia
3 publications · 91 citations
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National Yunlin University of Science and Technology, Taiwan
2 publications · 31 citations
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City University of Hong Kong
Hong Kong, Hong Kong
2 h-index
4 publications
110 citations
Electronics and Telecommunications Research Institute
Daejeon, South Korea
2 h-index
4 publications
124 citations

University of Hong Kong
Pok Fu Lam, Hong Kong
2 h-index
4 publications
168 citations

University of Manchester
Manchester, United Kingdom
2 h-index
2 publications
132 citations
Kyung Hee University
Seoul, South Korea
2 h-index
7 publications
215 citations
Samsung (South Korea)
Seoul, South Korea
2 h-index
7 publications
1.4K citations
Yonsei University
Seoul, South Korea
2 h-index
13 publications
182 citations
National Yunlin University of Science and Technology
Douliu, Taiwan
2 h-index
6 publications
93 citations
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13 publications · 1.2K citations
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11 publications · 347 citations
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6 publications · 398 citations
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5 publications · 183 citations
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4 publications · 128 citations
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