Concepedia

Transfer Gate Design

Transfer Gate Design is a semiconductor device engineering methodology that specifies the structural and operational configuration of gate electrodes in charge-coupled devices to enable controlled, high-fidelity electron transfer between adjacent pixels during readout.

23

Publications

511

Citations

170

Authors

23

Institutions

Publications per year

2017–2026

4

Parents

Publications

23

The pinned photodiode for an interline-transfer CCD image sensor

B.C. Burkey, W.-C. Chang, J. Littlehale et al. · 1984 · 73 citations

, , +15

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

Vincent Goiffon, Magali Estribeau, Paola Cervantes et al. · IEEE Transactions on Nuclear Science · 2014 · 44 citations · Full text

, , +16

A 2 million pixel FIT-CCD image sensor for HDTV camera system

K. Yonemoto, T. Iizuku, Shunsuke Nakamura et al. · 1990 · 36 citations

, , +17

GaAs charge-coupled devices

I. Deyhimy, J. S. Harris, R.C. Eden et al. · Applied Physics Letters · 1978 · 33 citations

, , +11

Design of a Time-of-Flight Sensor With Standard Pinned-Photodiode Devices Toward 100-MHz Modulation Frequency

Seunghyun Lee, Dahwan Park, Sanguk Lee et al. · IEEE Access · 2019 · 27 citations · Full text

, , +17

1–5 of 23

Authors

170

  1. MN
    M. Negishi

    2 publications · 55 citations

    2

    h-index

  2. MY
    Masakazu Yamagishi

    The University of Osaka, Japan

    2 publications · 55 citations

    2

    h-index

  3. VG
    Vincent Goiffon

    Université Fédérale de Toulouse Midi-Pyrénées, France

    2 publications · 70 citations

    2

    h-index

  4. PM
    Pierre Magnan

    Université Fédérale de Toulouse Midi-Pyrénées, France

    2 publications · 70 citations

    2

    h-index

  5. KH
    K. Harada

    Tokushima University, Japan

    2 publications · 55 citations

    2

    h-index

1–5 of 170

Institutions

23

  1. Université Fédérale de Toulouse Midi-Pyrénées

    Toulouse, France

    2 h-index

    11 publications

    376 citations

  2. NEC (Japan)

    Tokyo, Japan

    2 h-index

    27 publications

    324 citations

  3. NTT Basic Research Laboratories

    Atsugi, Japan

    2 h-index

    9 publications

    132 citations

  4. Sony (Taiwan)

    Taipei, Taiwan

    2 h-index

    10 publications

    130 citations

  5. Dartmouth College

    Hanover, United States

    1 h-index

    1 publications

    16 citations

  6. Kodak (United States)

    Rochester, United States

    1 h-index

    7 publications

    511 citations

  7. Sony Corporation (United States)

    New York, United States

    1 h-index

    1 publications

    13 citations

  8. Eastman Chemical Company (United States)

    Kingsport, United States

    1 h-index

    7 publications

    511 citations

1–8 of 23

Venues

  1. IEEE Transactions on Electron Devices

    3 publications · 64 citations

    3

    h-index

  2. IEEE Electron Device Letters

    2 publications · 29 citations

    2

    h-index

  3. IEEE Transactions on Magnetics

    1 publications · 16 citations

    1

    h-index

  4. Microelectronics Journal

    1 publications · 13 citations

    1

    h-index

  5. Journal of Applied Physics

    1 publications · 19 citations

    1

    h-index

1–5