Vincent Goiffon

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Vincent Goiffon, Magali Estribeau, Olivier Marcelot et al. · IEEE Transactions on Nuclear Science · 2012 · 100 citations

Total Ionizing Dose, Engineering, Radiation Exposure +20

Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology

Cédric Virmontois, Vincent Goiffon, Pierre Magnan et al. · IEEE Transactions on Nuclear Science · 2010 · 82 citations

Engineering, Deep Submicron Technology, Dark Current Behavior +17

Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology

Vincent Goiffon, G.R. Hopkinson, Pierre Magnan et al. · IEEE Transactions on Nuclear Science · 2009 · 79 citations

Engineering, Deep Submicron Technology, Displacement Damage Dose +18

Enhanced Radiation-Induced Narrow Channel Effects in Commercial <formula formulatype="inline"><tex Notation="TeX">${\hbox {0.18}}~\mu$</tex> </formula>m Bulk Technology

Marc Gaillardin, Vincent Goiffon, Sylvain Girard et al. · IEEE Transactions on Nuclear Science · 2011 · 75 citations

Engineering, Dose Effects, Radiation Physics +23

Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure

Antoine Jay, M. Raine, N. Richard et al. · IEEE Transactions on Nuclear Science · 2016 · 69 citations · Full text

Engineering, Silicon–part Ii, Mechanical Engineering +26