Concepedia

Surface Diffusion Along Defects

Surface Diffusion Along Defects is a surface diffusion mechanism in which atomic or molecular migration preferentially occurs along localized structural imperfections such as steps, kinks, or dislocations on a solid surface, thereby enhancing diffusion rates and altering pathway dynamics compared to diffusion on pristine terraces.

7

Publications

154

Citations

19

Authors

12

Institutions

Publications per year

2017–2026

0

Parents

Publications

7

Three dimensional finite element analysis of the evolution of voids and thin films by strain and electromigration induced surface diffusion

Yong‐Wei Zhang · Journal of the Mechanics and Physics of Solids · 1998 · 61 citations

, , +16

X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON

Ilan A. Blech, Eugene S. Meieran, Harry Sello · Applied Physics Letters · 1965 · 25 citations

, , +16

The influence of surface defects on the forming-limit diagram of sheet metal

Tetsumaro Hiroi, Hisashi Nishimura · Journal of Materials Processing Technology · 1997 · 16 citations

, , +15

Surface diffusion of Pb atoms on the Si(553)-Au surface in narrow quasi-one-dimensional channels

Paweł Nita, Krisztián Palotás, M. Jałochowski et al. · Physical Review B · 2014 · 15 citations · Full text

, , +17

Local Spectral Responses of Transition Metal Dichalcogenides in Photoelectrochemical Cells

L. De Angelis, E. Scafè, F. Galluzzi et al. · Journal of The Electrochemical Society · 1982 · 14 citations · Full text

, , +17

1–5 of 7

Authors

19

  1. MG
    Margret Giesen

    Forschungszentrum Jülich, Germany

    1 publications · 11 citations

    1

    h-index

  2. ES
    Eugene S. Meieran

    Fairchild Semiconductor (United States), United States

    1 publications · 25 citations

    1

    h-index

  3. MJ
    M. Jałochowski

    Maria Curie-Skłodowska University, Poland

    1 publications · 15 citations

    1

    h-index

  4. HN
    Hisashi Nishimura

    Tokyo Metropolitan University, Japan

    1 publications · 16 citations

    1

    h-index

  5. FG
    F. Galluzzi

    University of Florence, Italy

    1 publications · 14 citations

    1

    h-index

1–5 of 19

Institutions

12

  1. Madrid Institute for Advanced Studies

    Madrid, Spain

    1 h-index

    4 publications

    60 citations

  2. Tokyo Metropolitan University

    Tokyo, Japan

    1 h-index

    1 publications

    16 citations

  3. Institute of Physics

    Warsaw, Poland

    1 h-index

    2 publications

    30 citations

  4. University of Stuttgart

    Stuttgart, Germany

    1 h-index

    1 publications

    12 citations

  5. Forschungszentrum Jülich

    Jülich, Germany

    1 h-index

    3 publications

    33 citations

  6. Brown University

    Providence, United States

    1 h-index

    1 publications

    61 citations

  7. Fairchild Semiconductor (United States)

    Sunnyvale, United States

    1 h-index

    3 publications

    75 citations

  8. Assing (Italy)

    Monterotondo, Italy

    1 h-index

    5 publications

    70 citations

1–8 of 12

Venues

  1. Surface Science

    1 publications · 11 citations

    1

    h-index

  2. Applied Physics Letters

    1 publications · 25 citations

    1

    h-index

  3. Physical Review B

    PRB · 1 publications · 15 citations

    1

    h-index

  4. Journal of The Electrochemical Society

    JES · 1 publications · 14 citations

    1

    h-index

  5. Journal of Materials Processing Technology

    1 publications · 16 citations

    1

    h-index

1–5