Concepedia

Finite Element Device Simulation

Finite Element Device Simulation is a computational modeling approach within device simulation that discretizes the device domain into finite elements to numerically solve partial differential equations governing physical phenomena, distinguishing itself by its use of variational methods and adaptive meshing for high-fidelity spatial resolution of complex geometries and material heterogeneities.

129

Publications

4.6K

Citations

448

Authors

175

Institutions

Publications per year

2017–2026

27

Parents

Publications

129

Generating efficient dynamical models for microelectromechanical systems from a few finite-element simulation runs

E.S. Hung, S.D. Senturia · Journal of Microelectromechanical Systems · 1999 · 272 citations

, , +17

A finite element model of EDM based on the Joule effect

José Duarte Marafona, J.A.G. Chousal · International Journal of Machine Tools and Manufacture · 2005 · 181 citations

, , +11

Investigation of Band-Offsets at Monolayer–Multilayer MoS<sub>2</sub> Junctions by Scanning Photocurrent Microscopy

Nano Letters · 2015 · 158 citations · Full text

, , +17

Metamaterial frequency-selective superabsorber

Jack Ng, Huanyang Chen, C. T. Chan · Optics Letters · 2009 · 155 citations · Full text

, , +13

A metamaterial frequency-selective super-absorber that has absorbing cross section significantly bigger than the geometric cross section

Jack Ng, Huanyang Chen, C. T. Chan · arXiv (Cornell University) · 2008 · 115 citations · Full text

, , +13

1–5 of 129

Authors

448

  1. AJ
    Antonio J. García‐Loureiro

    Universidade de Santiago de Compostela, Spain

    3 publications · 99 citations

    3

    h-index

  2. RL
    R.J. Lomax

    University of Michigan, United States

    3 publications · 120 citations

    3

    h-index

  3. BZ
    Bo Zhang

    University of Electronic Science and Technology of China, China

    1 publications · 102 citations

    2

    h-index

  4. VP
    V.P. Plessky

    Helsinki Institute of Physics, Finland

    2 publications · 110 citations

    2

    h-index

  5. WY
    Wei Yang

    University of Electronic Science and Technology of China, China

    2 publications · 23 citations

    2

    h-index

1–5 of 448

Institutions

175

  1. IBM (United States)

    Armonk, United States

    6 h-index

    9 publications

    296 citations

  2. Universidade de Santiago de Compostela

    Santiago de Compostela, Spain

    4 h-index

    7 publications

    267 citations

  3. University of Toronto

    Toronto, Canada

    3 h-index

    8 publications

    317 citations

  4. Ferdinand-Braun-Institut

    Berlin, Germany

    3 h-index

    22 publications

    1.4K citations

  5. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    3 h-index

    12 publications

    248 citations

  6. Zuse Institute Berlin

    Berlin, Germany

    3 h-index

    7 publications

    101 citations

  7. University of Cambridge

    Cambridge, United Kingdom

    3 h-index

    7 publications

    167 citations

  8. University of Michigan

    Ann Arbor, United States

    3 h-index

    5 publications

    161 citations

1–8 of 175

Venues

  1. IEEE Transactions on Electron Devices

    10 publications · 302 citations

    10

    h-index

  2. Applied Physics Letters

    8 publications · 164 citations

    8

    h-index

  3. 5

    h-index

  4. IEEE Transactions on Magnetics

    4 publications · 145 citations

    4

    h-index

  5. IEEE Transactions on Power Electronics

    3 publications · 91 citations

    4

    h-index

1–5