Wei Dong Zhang - Concepedia

Author

Wei Dong Zhang

Liverpool John Moores University ORCID

Also Known As

Jiqing Fu, W Zhang, W. Zhang, W., Zhang, Wei D. Zhang, Wei Dong Zhang, Wei Zhang

Publications

940

Citations

H-Index

Concepts

All Affiliations

Liverpool John Moores University IMEC KU Leuven University of Malaya University of Glasgow

About

Wei Dong Zhang is an author at Liverpool John Moores University specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	19	516
2	Electrical Engineering	16	19	516
3	Applied Physics	15	17	466
4	Computer Engineering	5	5	108
5	Education	2	2	50

Wei Dong Zhang

Publications

674

Citations

H-Index

Page 1

	Year	Citations
Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects Sharifah Fatmadiana Wan Muhamad Hatta, Zhigang Ji, J. F. Zhang, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringGate DielectricEnergy DistributionSemiconductor Device	2013	59
An Investigation on Border Traps in III–V MOSFETs With an In<sub>0.53</sub>Ga<sub>0.47</sub>As Channel Zhigang Ji, Xiong Zhang, J. Franco, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2015	51
A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States Long-Yi Lin, Zhigang Ji, J. F. Zhang, IEEE Transactions on Electron Devices EngineeringCharge TransportHigh Voltage EngineeringConventional CpPulse Power	2011	51
New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation Meng Duan, J. F. Zhang, Zhigang Ji, IEEE Transactions on Electron Devices EngineeringMeasurementNanometer-size DevicesEducationNew Analysis Method	2013	38
Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation Rui Gao, Azrif Manut, Zhigang Ji, IEEE Transactions on Electron Devices	2017	38
Two types of neutral electron traps generated in the gate silicon dioxide Wei Dong Zhang, J. F. Zhang, A. Lalor, IEEE Transactions on Electron Devices Materials EngineeringElectrical EngineeringEngineeringPhysicsNeutral Electron Traps	2002	35
Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application Xue Zheng, Wei Dong Zhang, B. Govoreanu, IEEE Transactions on Electron Devices Non-volatile MemoryElectrical EngineeringElectron Traps ThroughoutSpatial DistributionsEngineering	2009	35
Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging Meng Duan, J. F. Zhang, Zhigang Ji, IEEE Transactions on Electron Devices	2016	34
NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling Rui Gao, Zhigang Ji, Azrif Manut, IEEE Transactions on Electron Devices EngineeringDefect ToleranceVoltage Step StressSemiconductor DeviceNbti Aging	2017	31
As-grown-Generation Model for Positive Bias Temperature Instability Rui Gao, Zhigang Ji, J. F. Zhang, IEEE Transactions on Electron Devices EngineeringPower ElectronicsStabilityNegative BtiNanoelectronics	2018	28

Page 1