Toshiyuki Takizawa - Concepedia

Author

Toshiyuki Takizawa

Panasonic (Japan)

Also Known As

T. Takizawa, Tomoya Takizawa, Toshiyuki TAKIZAWA, Toshiyuki Takizawa, Toshiyuki Takizawa Toshiyuki Takizawa

Publications

502

Citations

H-Index

Concepts

All Affiliations

Panasonic (Japan)Wakayama University Lawrence Berkeley National Laboratory Stanford University Tokyo Institute of Technology

About

Toshiyuki Takizawa is an author at Panasonic (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	440
2	Applied Physics	8	8	420
3	Electrical Engineering	2	2	103
4	Natural Sciences	1	1	120
5	Chemical Engineering	1	1	93

Toshiyuki Takizawa

Publications

450

Citations

H-Index

Page 1

	Year	Citations
Nearest-Neighbor Configuration in (GaIn)(NAs) Probed by X-Ray Absorption Spectroscopy Vincenzo Lordi, Vincent Gambin, S. Friedrich, Physical Review Letters X-ray SpectroscopyEngineeringShort-range OrderingN AtomsStable Alloy	2003	120
Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization Toshiyuki Takizawa, Shigehisa Arai, Masafumi Nakahara Masafumi Nakahara Japanese Journal of Applied Physics Materials ScienceChemical EngineeringEngineeringElectrochemical AnodizationPorous Inp	1994	93
High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal Kenji Orita, Satoshi Tamura, Toshiyuki Takizawa, Japanese Journal of Applied Physics White OledPhotonicsElectrical EngineeringGan-based LedsEngineering	2004	72
Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface Eijiro Kikuno Eijiro Kikuno, Marco Amiotti Marco Amiotti, Toshiyuki Takizawa, Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationPore StructureBulk InpGradient Index Materials	1995	47
High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors Hidekazu Umeda, Toshiyuki Takizawa, Yoshiharu Anda, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringIon Implantation	2012	31
Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda Journal of Electronic Materials Materials ScienceWide-bandgap SemiconductorAlgan/gan UsingEngineeringSurface Science	2008	26
Chaos in a feedback Fabry-Perot interferometer Toshiyuki Takizawa, U. Liu, Junji Ohtsubo IEEE Journal of Quantum Electronics PhotonicsEngineeringPhysicsLaser Diode SourceChaos Theory	1994	20
Structural changes on annealing of MBE grown (Ga, In)(N, As) as measured by X-ray absorption fine structure Vincent Gambin, Vincenzo Lordi, Wonill Ha, Journal of Crystal Growth Materials ScienceX-ray SpectroscopyEngineeringCrystal Growth TechnologyStructural Changes	2003	16
Thermal annealing effects and local atomic configurations in GaInNAs thin films Kazuyuki Uno, Masako Yamada, Ichiro Tanaka, Journal of Crystal Growth Materials ScienceEngineeringLocal Atomic ConfigurationsPhysicsCrystal Growth Technology	2005	15
High fmax with High Breakdown Voltage in AlGaN/GaN MIS-HFETs using In-Situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium	2008	10

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