P. A. Childs - Concepedia

Author

P. A. Childs

University of Birmingham

Also Known As

P A CHILDS, P A Childs, P. A. Childs, P.A Childs, P.A. Childs, Peter A Childs

Publications

477

Citations

H-Index

Concepts

All Affiliations

University of Birmingham University of Liverpool Durham University

About

P. A. Childs is an author at University of Birmingham specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	261
2	Applied Physics	10	10	233
3	Chemistry	2	2	42
4	Chemical Engineering	1	1	28
5	Computer Engineering	1	1	28

P. A. Childs

Publications

368

Citations

H-Index

Page 1

	Year	Citations
Multiplexing of polarization-maintaining photonic crystal fiber based Sagnac interferometric sensors Hongyan Fu, Allan C. L. Wong, P. A. Childs, Optics Express	2009	52
A one-dimensional solution of the Boltzmann transport equation including electron–electron interactions P. A. Childs, Carl Leung Journal of Applied Physics Device ModelingScattering ModelElectrical EngineeringEngineeringPhysics	1996	46
Evidence of optical generation of minority carriers from saturated MOS transistors P. A. Childs, R.A. Stuart, W. Eccleston Solid-State Electronics PhotonicsElectrical EngineeringOptical MaterialsEngineeringOptical Properties	1983	42
New mechanism of hot carrier generation in veryshort channel MOSFETs P. A. Childs, Carl Leung Electronics Letters	1995	34
Deposition of passivated gold nanoclusters onto prepatterned substrates Amanda Parker, P. A. Childs, Richard E. Palmer, Applied Physics Letters Materials ScienceChemical EngineeringEngineeringNanoclusterMetal Nanoparticles	1999	28
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks Pierpaolo Palestri, N. Barin, Dominique Brunel, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringVlsi DesignStress-induced Leakage Current	2007	28
Alternative mechanism for substrate minority carrier injection in MOS devices operating in low level avalanche P. A. Childs, W. Eccleston, R.A. Stuart Electronics Letters PhotonicsElectrical EngineeringAlternative MechanismEngineeringMos Devices	1981	23
Spatially transient hot electron distributions in silicon determined from the chambers path integral solution of the Boltzmann transport equation Carl Leung, P. A. Childs Solid-State Electronics Integral SolutionEngineeringPhysicsThermal TransportApplied Physics	1993	17
Self-Consistent 2-D Monte Carlo Simulations of InSb APD D C Herbert, P. A. Childs, R. A. Abram, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringRf SemiconductorPhysicsLow Voltage	2005	17
High-energy electron–electron interactions in silicon and their effect on hot carrier energy distributions Megan Chang, D. W. Dyke, Carl Leung, Journal of Applied Physics Semiconductor TechnologyElectronic DevicesHigh-energy Electron–electron InteractionsEngineeringPhysics	1997	16

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