The dependence of the electrical and optical properties of molecular beam epitaxial Ino.52Alo.48As on growth parameters: Interplay of surface kinetics and thermodynamics

J. E. Oh, P. Bhattacharya, Y. C. Chen, +2

Journal of Electronic Materials

Materials ScienceOptical MaterialsEngineeringPhysicsSurface Kinetics +6

Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy

Y.H. Kim, Jeong Yong Lee, Sang‐Hun Lee, +2

Applied Physics A

Materials ScienceEngineeringNanotechnologyGan NanorodsApplied Physics +2

Interface states in modulation-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructures

Won-Pyo Hong, J. E. Oh, P. Bhattacharya, +1

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics +13

High-gain pseudomorphic InGaAs base ballistic hot-electron device

K. Seo, M. Heiblum, C. M. Knoedler, +3

IEEE Electron Device Letters

Semiconductor TechnologyElectrical EngineeringL ValleyEngineeringBallistic Devices +7

In-plane hole effective masses in In<i>x</i>Ga1−<i>x</i>As/Al0.15Ga0.85As modulation-doped heterostructures

M. Jaffé, J. E. Oh, J. Pamulapati, +2

Applied Physics Letters

Oxide HeterostructuresMaterials ScienceWide-bandgap SemiconductorStrain DependenceEngineering +9

Transmission electron microscopy study of the initial growth stage of GaSb grown on Si (001) substrate by molecular beam epitaxy method

Young Heon Kim, Y.K. Noh, Moon‐Deock Kim, +2

Thin Solid Films

Materials ScienceInitial Growth StageEngineeringGasb GrownCrystal Growth Technology +4

Investigation of the interface region produced by molecular beam epitaxial regrowth

Dipankar Biswas, Paul R. Berger, Utpal Das, +2

Journal of Electronic Materials

Materials ScienceEngineeringElectron-beam LithographyMicroscopyApplied Physics +5

Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures

Richard L. Tober, J. Pamulapati, P. Bhattacharya, +1

Journal of Electronic Materials

EngineeringTunneling MicroscopyPhysicsApplied PhysicsQuantum Materials +4

Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design

Geok Ing Ng, D. Pavlidis, M. Tutt, +2

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringStrained Hemt CharacteristicsEngineering +11

Deflection test and transmission error measurement to identify hypoid gear whine noise

Jonghun Yoon, Byung-Uk Choi, In-Hyung Yang, +1

International Journal of Automotive Technology

Deflection TestEngineering Noise ControlNoise ControlMeasurementTransmission Error Measurement +2