J. E. Oh

The dependence of the electrical and optical properties of molecular beam epitaxial Ino.52Alo.48As on growth parameters: Interplay of surface kinetics and thermodynamics

J. E. Oh, P. Bhattacharya, Y. C. Chen et al. · Journal of Electronic Materials · 1990 · 56 citations

Materials Science, Optical Materials, Engineering +8

Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy

Y.H. Kim, Jeong Yong Lee, Sang‐Hun Lee et al. · Applied Physics A · 2005 · 37 citations

Materials Science, Engineering, Nanotechnology +4

Interface states in modulation-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructures

Won-Pyo Hong, J. E. Oh, P. Bhattacharya et al. · IEEE Transactions on Electron Devices · 1988 · 31 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

High-gain pseudomorphic InGaAs base ballistic hot-electron device

K. Seo, M. Heiblum, C. M. Knoedler et al. · IEEE Electron Device Letters · 1989 · 30 citations

Semiconductor Technology, Electrical Engineering, L Valley +9

In-plane hole effective masses in In<i>x</i>Ga1−<i>x</i>As/Al0.15Ga0.85As modulation-doped heterostructures

M. Jaffé, J. E. Oh, J. Pamulapati et al. · Applied Physics Letters · 1989 · 28 citations · Full text

Oxide Heterostructures, Materials Science, Wide-bandgap Semiconductor +11