High-gain pseudomorphic InGaAs base ballistic hot-electron device

Abstract

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In/sub 0.12/Ga/sub 0.88/As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Gamma -L valley separation in the strained In/sub 0.12/Ga/sub 0.88/As was estimated to be about 380 meV.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>