Shang-Ju Tu - Concepedia

Author

Shang-Ju Tu

National Cheng Kung University

Also Known As

S. H. Tu, Shang-Ju Tu

Publications

277

Citations

H-Index

Concepts

All Affiliations

National Cheng Kung University Southern Taiwan University of Science and Technology

About

Shang-Ju Tu is an author at National Cheng Kung University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	220
2	Applied Physics	9	9	220
3	Electrical Engineering	9	9	220
4	Materials Science	3	3	46
5	Materials Engineering	1	1	11

Shang-Ju Tu

Publications

230

Citations

H-Index

Page 1

	Year	Citations
Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers Jinn‐Kong Sheu, Chih-Ciao Yang, Shang-Ju Tu, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringGan-based Solar CellsEngineering	2009	73
Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy Kuo-Hua Chang, Jinn‐Kong Sheu, Ming-Lun Lee, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsInverted Devices	2010	28
High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer Tsung‐Shine Ko, Der-Yuh Lin, Chia-Feng Lin, Journal of Crystal Growth Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringEngineeringAln Spacer Layer	2016	28
InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer Shang-Ju Tu, Chun-Kai Lan, S-H Wang, Applied Physics Letters Ingan GalliumEngineeringReflective Electrode PadsConventional LedsNanoelectronics	2010	22
Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration Chih-Ciao Yang, C. H. Jang, Jinn‐Kong Sheu, Optics Express High ConcentrationsWide-bandgap SemiconductorEngineeringEnergy EfficiencyEnergy Conversion	2011	19
Improved Output Power of GaN-based Blue LEDs by Forming Air Voids on Ar-Implanted Sapphire Substrate Jinn‐Kong Sheu, Yu-Hsiang Yeh, Shang-Ju Tu, Journal of Lightwave Technology Electrical EngineeringSolid-state LightingEngineeringPhysicsExperimental Leds	2013	15
Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate Jinn‐Kong Sheu, Shang-Ju Tu, Yu-Hsiang Yeh, Applied Physics Letters Materials ScienceAluminium NitrideElectrical EngineeringEmbedded Air VoidsEngineering	2012	13
Solar-Blind p-i-n Photodetectors Formed on ${\rm SiO}_{2}$-Patterned n-GaN Templates Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu IEEE Journal of Quantum Electronics Aluminium NitrideWide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductors	2012	11
Vertical InGaN light-emitting diodes with a sapphire-face-up structure Y.C. Yang, Jinn‐Kong Sheu, Ming-Lun Lee, Optics Express Vertical Leds BehavePhotonicsElectrical EngineeringSolid-state LightingEngineering	2011	11
Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates Ching-Hsueh Chiu, Lung-Hsing Hsu, Chia-Yu Lee, IEEE Photonics Technology Letters	2012	10

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