Shang-Ju Tu

Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

Jinn‐Kong Sheu, Chih-Ciao Yang, Shang-Ju Tu et al. · IEEE Electron Device Letters · 2009 · 73 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Kuo-Hua Chang, Jinn‐Kong Sheu, Ming-Lun Lee et al. · Applied Physics Letters · 2010 · 28 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +12

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Tsung‐Shine Ko, Der-Yuh Lin, Chia-Feng Lin et al. · Journal of Crystal Growth · 2016 · 28 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +7

InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer

Shang-Ju Tu, Chun-Kai Lan, S-H Wang et al. · Applied Physics Letters · 2010 · 22 citations

Ingan Gallium, Engineering, Reflective Electrode Pads +16

Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration

Chih-Ciao Yang, C. H. Jang, Jinn‐Kong Sheu et al. · Optics Express · 2011 · 19 citations · Full text

High Concentrations, Wide-bandgap Semiconductor, Engineering +17