High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer - Concepedia

Concepedia

Publication | Closed Access

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

28

Citations

18

References

2016

Year

Tsung‐Shine Ko, Der-Yuh Lin, Chia-Feng Lin, Che-Wei Chang, Jin-Cheng Zhang, Shang-Ju Tu

Journal of Crystal Growth

Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringEngineeringAln Spacer LayerApplied PhysicsAluminum Gallium NitrideAlgan/gan HemtGan Power DeviceMobility Enhancements

References

	Year	Citations

Page 1