Ming-Lun Lee - Concepedia

Author

Ming-Lun Lee

Southern Taiwan University of Science and Technology

Also Known As

Ming-Lun Lee

Publications

386

Citations

H-Index

Concepts

All Affiliations

Southern Taiwan University of Science and Technology National Cheng Kung University

About

Ming-Lun Lee is an author at Southern Taiwan University of Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	277
2	Applied Physics	9	9	252
3	Electrical Engineering	9	9	252
4	Chemistry	3	3	37
5	Chemical Engineering	2	2	25

Ming-Lun Lee

Publications

307

Citations

H-Index

Page 1

	Year	Citations
Nonalloyed Cr∕Au-based Ohmic contacts to n-GaN Ming-Lun Lee, Jinn‐Kong Sheu, C. C. Hu Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	2007	86
Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes Shih‐Chang Shei, Jinn‐Kong Sheu, Chi-Ming Tsai, Japanese Journal of Applied Physics SemiconductorsElectrical EngineeringElectronic DevicesBlue QuantumEngineering	2006	37
Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth Ming-Lun Lee, Shih-Sian Wang, Yu-Hsiang Yeh, Scientific Reports	2019	30
Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy Kuo-Hua Chang, Jinn‐Kong Sheu, Ming-Lun Lee, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsInverted Devices	2010	28
Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer Jinn‐Kong Sheu, Fengwen Huang, Chia-Hui Lee, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringEnergy ConversionOrganic Solar Cell	2013	23
GaN intermediate band solar cells with Mn-doped absorption layer Ming-Lun Lee, Fengwen Huang, Po-Cheng Chen, Scientific Reports Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceMn DopingEngineering	2018	22
Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption Jinn‐Kong Sheu, Po-Cheng Chen, Cheng-Lun Shin, Solar Energy Materials and Solar Cells Electrical EngineeringEngineeringIntermediate Band AbsorptionApplied PhysicsAluminum Gallium Nitride	2016	20
Photoelectrochemical Generation of Hydrogen and Formic Acid Using GaN Films Decorated with TiO<sub>2</sub>/Ag Nanoparticles Composite Structure as Photoelectrodes Jinn‐Kong Sheu, Po-Hsun Liao, Yen-Cheng Lee, The Journal of Physical Chemistry C Materials ScienceChemical EngineeringPhotoelectrochemical GenerationEngineeringPhotochemistry	2020	15
Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate Jinn‐Kong Sheu, Shang-Ju Tu, Yu-Hsiang Yeh, Applied Physics Letters Materials ScienceAluminium NitrideElectrical EngineeringEmbedded Air VoidsEngineering	2012	13
Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy Jinn‐Kong Sheu, Fengwen Huang, P. C. Chen, Applied Physics Letters Wide-bandgap SemiconductorEngineeringInorganic PhotochemistryDistinct Absorption ThresholdsChemistry	2013	12

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