V. Ku

High performance and low power transistors integrated in 65nm bulk CMOS technology

Zuying Luo, An Steegen, M. Eller et al. · 2005 · 81 citations

Engineering, Electrical Engineering, Low-power Design +16

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +16

High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering

V. Chan, R. Rengarajan, N. Rovedo et al. · 2004 · 76 citations

Engineering, Electrical Engineering, Microelectronics +16

Triple-self-aligned, planar double-gate MOSFETs: devices and circuits

K.W. Guarini, P. M. Solomon, Y. Zhang et al. · 2002 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Identification of plasma-sheath resonances in a parallel-plate plasma reactor

B. M. Annaratone, V. Ku, J. E. Allen · Journal of Applied Physics · 1995 · 57 citations

Natural Sciences, Physics, Plasma Physics +16