Mami N. Fujii - Concepedia

Author

Mami N. Fujii

Nara Institute of Science and Technology

Also Known As

M. Fujii, Mami Fujii, Mami N Fujii, Mami N. FUJII, Mami N. Fujii, Ryoko Miyanaga

117

Publications

750

Citations

H-Index

Concepts

All Affiliations

Nara Institute of Science and Technology Merck (Japan)Kyushu University Delft University of Technology Samsung (South Korea)

About

Mami N. Fujii is an author at Nara Institute of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	24	578
2	Applied Physics	16	24	578
3	Electrical Engineering	16	23	565
4	Chemical Engineering	1	1	22
5	Chemistry	1	1	13

Mami N. Fujii

Publications

639

Citations

H-Index

Page 1

	Year	Citations
Thermal Analysis of Degradation in Ga<sub>2</sub>O<sub>3</sub>–In<sub>2</sub>O<sub>3</sub>–ZnO Thin-Film Transistors Mami N. Fujii, Hiroshi Yano, Tomoaki Hatayama, Japanese Journal of Applied Physics Electrical EngineeringElectronic DevicesEngineeringVertical Electric FieldOxide Electronics	2008	82
Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Mami N. Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringOxide Electronics	2013	45
Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, ECS Journal of Solid State Science and Technology Materials ScienceElectrical EngineeringBias StressEngineeringNanoelectronics	2014	39
Experimental and Theoretical Analysis of Degradation in Ga<sub>2</sub>O<sub>3</sub>–In<sub>2</sub>O<sub>3</sub>–ZnO Thin-Film Transistors Mami N. Fujii, Yukiharu Uraoka, Takashi Fuyuki, Japanese Journal of Applied Physics Materials ScienceTheoretical AnalysisElectrical EngineeringElectronic DevicesEngineering	2009	34
The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors Haruka Yamazaki, Yasuaki Ishikawa, Mami N. Fujii, ECS Journal of Solid State Science and Technology Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityApplied Physics	2013	30
Hot carrier effects in InGaZnO thin-film transistor Takanori Takahashi, Ryoko Miyanaga, Mami N. Fujii, Applied Physics Express SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesThin-film Transistor	2019	29
High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO Dianne Corsino, Juan Paolo Bermundo, Chaiyanan Kulchaisit, ACS Applied Electronic Materials Materials ScienceElectrical EngineeringElectronic DevicesEngineeringElectronic Materials	2020	29
High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric Mami N. Fujii, Yasuaki Ishikawa, Kazumoto Miwa, Scientific Reports	2015	27
Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment Michael Paul A. Jallorina, Juan Paolo Bermundo, Mami N. Fujii, Applied Physics Letters Materials ScienceElectrical EngineeringSignificant Mobility ImprovementElectronic MaterialsCrystalline Defects	2018	26
Highly reliable photosensitive organic-inorganic hybrid passivation layers for <i>a</i>-InGaZnO thin-film transistors Juan Paolo Bermundo, Yasuaki Ishikawa, Haruka Yamazaki, Applied Physics Letters EngineeringOrganic ElectronicsOptoelectronic DevicesThin Film Process TechnologyElectronic Devices	2015	22

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