Juan Paolo Bermundo

Effect of contact material on amorphous InGaZnO thin-film transistor characteristics

Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo et al. · Japanese Journal of Applied Physics · 2014 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress

Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo et al. · ECS Journal of Solid State Science and Technology · 2014 · 41 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa et al. · Nanotechnology · 2020 · 41 citations

Engineering, Materials Engineering, Materials Science +17

Highly Reliable Polysilsesquioxane Passivation Layer for<i>a</i>-InGaZnO Thin-Film Transistors

Juan Paolo Bermundo, Yasuaki Ishikawa, Haruka Yamazaki et al. · ECS Journal of Solid State Science and Technology · 2013 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

Hot carrier effects in InGaZnO thin-film transistor

Takanori Takahashi, Ryoko Miyanaga, Mami N. Fujii et al. · Applied Physics Express · 2019 · 29 citations

Engineering, Electrical Engineering, Materials Science +17