Ryoichi Ishihara - Concepedia

Author

Ryoichi Ishihara

Also Known As

Ishihara, Ryoichi, R Ishihara, R. ISHIHARA, R. Ishihara, Rimbach-Russ, Maximilian, Ryoichi ISHIHARA, Ryoichi Ishihara, Ryoichi Ishihara Ryoichi Ishihara

209

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

Delft University of Technology Seiko Holdings (Japan)Epson Information Technology College Tokyo Institute of Technology Epson (United States)

About

Ryoichi Ishihara is an author at Delft University of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	51	1.5K
2	Applied Physics	22	49	1.4K
3	Biomedical Engineering	1	1	10
4	Chemical Engineering	1	1	12
5	Chemistry	1	1	19

Ryoichi Ishihara

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent Lieven M. K. Vandersypen, Hendrik Bluhm, James S. Clarke, npj Quantum Information	2017	606
Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers Sten Vollebregt, Ryoichi Ishihara, F.D. Tichelaar, Carbon Materials ScienceNanosheetGrowth TemperatureEngineeringCarbon-based Material	2012	239
Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films Paul C. van der Wilt, Barry D. van Dijk, Guus Bertens, Applied Physics Letters EngineeringNonrefractory MaterialsCrystal Growth TechnologySilicon On InsulatorLateral Growth	2001	96
Carbon nanotube vertical interconnects fabricated at temperatures as low as 350°C Sten Vollebregt, F.D. Tichelaar, H. Schellevis, Carbon Materials ScienceEngineeringCarbon-based MaterialNanomaterialsCarbon Nanotechnology	2014	54
Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain Vikas Rana, Ryoichi Ishihara, Yasushi Hiroshima, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringLocation-controlled GrainPhysicsNanoelectronics	2005	46
Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing Mami N. Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringOxide Electronics	2013	45
Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films Ryoichi Ishihara, Wen-Chang Yeh Wen-Chang Yeh, Takeo Hattori, Japanese Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsDelayed TriggerExcimer-laser Light Pulse	1995	44
Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors Ryoichi Ishihara, Masakiyo Matsumura Japanese Journal of Applied Physics EngineeringLaser MaterialIntegrated CircuitsThin Film Process TechnologySilicon On Insulator	1997	43
Monolithic 3D-ICs with single grain Si thin film transistors Ryoichi Ishihara, Jaber Derakhshandeh, M. R. Tajari Mofrad, Solid-State Electronics 3D Ic ArchitectureElectrical EngineeringWafer Scale ProcessingEngineeringNanoelectronics	2012	43
Advanced excimer-laser crystallization process for single-crystalline thin film transistors Ryoichi Ishihara, Paul C. van der Wilt, Barry D. van Dijk, Thin Solid Films Materials ScienceEngineeringOptical PropertiesCrystal Growth TechnologyApplied Physics	2003	41

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