Yasushi Hiroshima

Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain

Vikas Rana, Ryoichi Ishihara, Yasushi Hiroshima et al. · IEEE Transactions on Electron Devices · 2005 · 46 citations

Electrical Engineering, Engineering, Location-controlled Grain +13

High-Quality SiO₂/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor

Seiichiro Higashi, Daisuke Abe, Yasushi Hiroshima et al. · Japanese Journal of Applied Physics · 2002 · 43 citations

Materials Science, Electrical Engineering, Electronic Devices +14

Effects of Capping Layer on Grain Growth with µ-Czochralski Process during Excimer Laser Crystallization

Ming He, Ryoichi Ishihara, Yasushi Hiroshima et al. · Japanese Journal of Applied Physics · 2006 · 34 citations

Optical Materials, Engineering, Crystal Growth Technology +18

Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization

Ryoichi Ishihara, Mingjie He, Vikas Rana et al. · Thin Solid Films · 2005 · 31 citations

Materials Science, Excimer-laser Crystallization, Engineering +11

Single-Grain Si TFTs With ECR-PECVD Gate<tex>$hbox SiO_2$</tex>

Ryoichi Ishihara, Yasushi Hiroshima, Daisuke Abe et al. · IEEE Transactions on Electron Devices · 2004 · 30 citations

Materials Science, Electrical Engineering, Engineering +11