Y. Ohshima

Degradation mechanism of flash EEPROM programming after program/erase cycles

Shigeru Yamada, Y. Hiura, Takeshi Yamane et al. · 2002 · 67 citations

Software Maintenance, Non-volatile Memory, Engineering +18

ONO inter-poly dielectric scaling for nonvolatile memory applications

S. Mori, E. Sakagami, Hirohiko Araki et al. · IEEE Transactions on Electron Devices · 1991 · 58 citations

Materials Science, Charge Leakage, Electrical Engineering +15

A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation

S. Atsumi, M. Kuriyama, Akira Umezawa et al. · IEEE Journal of Solid-State Circuits · 1994 · 43 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

A study of the effects of BGA solder geometry on fatigue life and reliability assessment

Qiang Yu, M. Shiratori, Y. Ohshima · 2002 · 35 citations

Engineering, Reliability Assessment, Mechanical Engineering +17

Power cycle reliability of Cu nanoparticle joints with mismatched coefficients of thermal expansion

Toshitaka Ishizaki, Daiki Miura, A. Kuno et al. · Microelectronics Reliability · 2016 · 24 citations

Materials Engineering, Materials Science, Engineering +8