U. Lambert

Lock-In IR-Thermography – A Novel Tool for Material and Device Characterization

S. Huth, Otwin Breitenstein, Arthur Huber et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2001 · 83 citations

Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

E. Dornberger, D. Gräf, M. Suhren et al. · Journal of Crystal Growth · 1997 · 77 citations

Materials Engineering, Materials Science, Engineering +8

Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals

Wilfried von Ammon, P. Dreier, Wolfgang Hensel et al. · Materials Science and Engineering B · 1996 · 59 citations

Materials Science, Engineering, Physics +8

Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography

S. Huth, Otwin Breitenstein, Andreas Huber et al. · Journal of Applied Physics · 2000 · 45 citations

Engineering, Integrated Circuits, Silicon On Insulator +19

Characterization of Crystal Quality by Crystal Originated Particle Delineation and the Impact on the Silicon Wafer Surface

D. Gräf, M. Suhren, U. Lambert et al. · Journal of The Electrochemical Society · 1998 · 42 citations

Engineering, Crystal Growth Technology, Cop Densities +19