Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2001 · 83 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesInfrared InstrumentationInfrared SpectroscopyLeak DetectionTemperature MeasurementThermal Properties Of SemiconductorsThermal SensorsInfrared ThermographyLateral ResolutionLeakageLeakage CurrentLeakage Current AnalysisLeakage Current DetectionMeasurementThermography
A novel non-destructive and non-contacting technique for the spatially resolved detection of small leak-age currents in electronic devices and MOS materials is presented. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leak-age current induced temperature variations down to 10 muK at a lateral resolution down to 5 mum. Leakage currents of about 1 mA can be localized within seconds and some muA may be detected after less than 1 h measurement.