Benjamin Heying

Statistics

Publications

Citations

204

H-Index

Active since

1996

Affiliations

Northrop Grumman (United States)(Current)

Advanced Micro Devices (United States)

Benjamin Heying is an author at Northrop Grumman (United States) specializing in engineering, semiconductor devices, and high-frequency semiconductor devices.

Publications per year

1996–2013

Publications

A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier

Mingqi Chen, William Sutton, Ioulia Smorchkova et al. · IEEE Microwave and Wireless Components Letters · 2010 · 70 citations

Engineering, Electrical Engineering, Microelectronics +16

Multi-decade GaN HEMT Cascode-distributed power amplifier with baseband performance

K.W. Kobayashi, Yaochung Chen, Ioulia Smorchkova et al. · 2009 · 51 citations

Engineering, Electrical Engineering, Microelectronics +16

Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire

S. Keller, D. Kapolnek, B.P. Keller et al. · Japanese Journal of Applied Physics · 1996 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +17

A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

K.W. Kobayashi, Yao-Chung Chen, Ioulia Smorchkova et al. · IEEE Journal of Solid-State Circuits · 2009 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Selective Growth of Diamond in Thermal Vias for GaN HEMTs

Benjamin Poust, Vincent Gambin, Rajinder Sandhu et al. · 2013 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

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