Haruo Nakazawa

A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa et al. · Applied Physics Express · 2016 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Silicon carbide wafer bonding by modified surface activated bonding method

Tadatomo Suga, Fengwen Mu, Masahisa Fujino et al. · Japanese Journal of Applied Physics · 2015 · 52 citations

Engineering, Materials Engineering, Materials Science +16

Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa et al. · Japanese Journal of Applied Physics · 2016 · 27 citations

Engineering, Materials Engineering, Materials Science +17

De-bondable SiC SiC wafer bonding via an intermediate Ni nano-film

Fengwen Mu, Miyuki Uomoto, T. Shimatsu et al. · Applied Surface Science · 2018 · 23 citations

Engineering, Materials Engineering, Materials Science +14

Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs

Haruo Nakazawa, Masaaki Ogino, Hiroki Wakimoto et al. · 2011 · 21 citations

Engineering, Electrical Engineering, Materials Science +14