Kenichi Iguchi

A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa et al. · Applied Physics Express · 2016 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Silicon carbide wafer bonding by modified surface activated bonding method

Tadatomo Suga, Fengwen Mu, Masahisa Fujino et al. · Japanese Journal of Applied Physics · 2015 · 52 citations

Engineering, Materials Engineering, Materials Science +16

Direct Wafer Bonding of SiC-SiC by SAB for Monolithic Integration of SiC MEMS and Electronics

Fengwen Mu, Kenichi Iguchi, H. Nakazawa et al. · ECS Journal of Solid State Science and Technology · 2016 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Surface strain sensing with polymer piezoelectric film

E. Matsumoto, Shiro Biwa, Keisuke KATSUMI et al. · NDT & E International · 2003 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +14

Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa et al. · Japanese Journal of Applied Physics · 2016 · 27 citations

Engineering, Materials Engineering, Materials Science +17