Hans‐Jürgen Lugauer

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Felix Nippert, S. Yu. Karpov, Gordon Callsen et al. · Applied Physics Letters · 2016 · 102 citations

Engineering, Electrical Engineering, Materials Science +17

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Felix Nippert, Mohammad Tollabi Mazraehno, Matthew Davies et al. · Applied Physics Letters · 2018 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

Bastian Galler, Hans‐Jürgen Lugauer, Michael Binder et al. · Applied Physics Express · 2013 · 53 citations

Engineering, Electrical Engineering, Physics +17

Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs

Tilman Schimpke, Martin Mandl, Ion Stoll et al. · physica status solidi (a) · 2016 · 53 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

Felix Nippert, S. Yu. Karpov, Ines Pietzonka et al. · Japanese Journal of Applied Physics · 2016 · 41 citations

Engineering, Electrical Engineering, Materials Science +17