M. Schwitters

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

K. Ueda, Makoto Kasu, Y. Yamauchi et al. · IEEE Electron Device Letters · 2006 · 271 citations

Materials Science, Single-crystalline Diamond Fets, Electrical Engineering +14

A Highly Reliable 3-D Integrated SBT Ferroelectric Capacitor Enabling FeRAM Scaling

L. Goux, Guido Russo, N. Menou et al. · IEEE Transactions on Electron Devices · 2005 · 35 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Dirk J. Wouters, D. Maes, L. Goux et al. · Journal of Applied Physics · 2006 · 31 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Characterization of high-quality polycrystalline diamond and its high FET performance

K. Ueda, Makoto Kasu, Y. Yamauchi et al. · Diamond and Related Materials · 2006 · 23 citations

Materials Science, Diamond-like Carbon, Electrical Engineering +2

Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy

D. A. Evans, O. R. Roberts, A. R. Vearey-Roberts et al. · Applied Physics Letters · 2007 · 21 citations

Aluminium Nitride, Engineering, Barrier Height +17