Koji Akiyama - Concepedia

Author

Koji Akiyama

The University of Tokyo

Also Known As

KOJI AKIYAMA, Koji AKIYAMA, Koji Akiyama

Publications

352

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo National Institute of Advanced Industrial Science and Technology Central Research Laboratories (United Kingdom)Panasonic (China)Shibaura Institute of Technology

About

Koji Akiyama is an author at The University of Tokyo specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	229
2	Applied Physics	8	8	178
3	Education	1	1	14
4	Natural Sciences	1	1	40
5	Chemical Engineering	1	1	20

Koji Akiyama

Publications

258

Citations

H-Index

Page 1

	Year	Citations
In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS Hidenori Miyoshi, Tetsuji Ueno, Koji Akiyama, EngineeringInterconnect (Integrated Circuits)Semiconductor DeviceAdvanced Packaging (Semiconductors)Nanoelectronics	2014	40
Hole Drift Mobility in Dimer Model Compounds of Poly(N-vinylcarbazole) Dispersed in a Polymer Binder Masaaki Yokoyama, Koji Akiyama, Naoki Yamamori, Polymer Journal Materials ScienceEngineeringPolymer BinderPolymer ScienceRheology	1985	37
Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering Hiroyuki Ota, Akito Hirano, Yukimune Watanabe, Electrical EngineeringIntrinsic OriginEngineeringPhysicsRemote Phonon	2007	31
Hydrogenated Amorphous Silicon Carbide Photoreceptor for Photoaddressed Spatial Light Modulator Koji Akiyama, Akio Takimoto, Akifumi Ogiwara, Japanese Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesChemistryPhotoelectric Sensor	1993	25
Effects of Ions on Properties of a-Si:H Films Prepared by ECR Plasma CVD Method Koji Akiyama, Eiichiro Tanaka, Akio Takimoto Japanese Journal of Applied Physics EngineeringH Films PreparedPlasma ProcessingSemiconductorsChemical Engineering	1988	20
Visible Photoluminescence in Highly Photoconductive Hydrogenated Amorphous Silicon Deposited by Glow Discharge of SiH<sub>4</sub> Highly Diluted with He Koji Akiyama, Akifumi Ogiwara, Hisahito Ogawa Japanese Journal of Applied Physics Materials SciencePhotoluminescenceEngineeringGlow DischargeOptoelectronic Materials	1994	17
Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor Wenwu Wang, Koji Akiyama, Wataru Mizubayashi, Journal of Applied Physics Materials ScienceElectrical CharacteristicsElectrical EngineeringEngineeringNanoelectronics	2009	16
Improved C–V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition Masaru Kadoshima, Koji Akiyama, Katsuhiko Yamamoto, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials ScienceElectrical EngineeringEngineeringTan Films	2004	16
Optically-Powered Transducer With Optical-Fiber Data Link Akira Ohte, Koji Akiyama, Isamu Ohno Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	1984	15
Photoaddressed spatial light modulator using transmissive and highly photosensitive amorphous-silicon carbide film Koji Akiyama, Akio Takimoto, Hisahito Ogawa Applied Optics	1993	14

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