Hydrogenated Amorphous Silicon Carbide Photoreceptor for Photoaddressed Spatial Light Modulator

Abstract

A highly photosensitive hydrogenated amorphous silicon carbide (a-Si 1- x C x :H) photoreceptor with a PIN diode configuration has been prepared by means of a plasma CVD method using SiH 4 and C 2 H 2 highly diluted with He. He-diluted plasma is effective in restraining the generation of CH 2 , CH 3 and Si-CH 3 configurations in the a-Si 1- x C x :H film and markedly improves photoconductivity of the film. Using this photoreceptor, a photoaddressed spatial light modulator (PASLM) which operates in a transmission mode, has been fabricated with a ferroelectric liquid crystal. The PASLM exhibits a high resolution of 180 line pairs/mm, a response time of ∼50 µs and a contrast ratio of ∼30:1 under a write light (λ=565 nm) of 1.5 mW/cm 2 intensity.