L.F.Tz. Kwakman - Concepedia

Author

L.F.Tz. Kwakman

Also Known As

L Kwakman, L. F. T. KWAKMAN, L. F. T. Kwakman, L. F. Tz. Kwakman, L. Kwakman, L.F.T Kwakman, L.F.T. Kwakman, L.F.T.Z Kwakman, L.F.Tz Kwakman, L.F.Tz. Kwakman

Publications

704

Citations

H-Index

Concepts

All Affiliations

CEA Grenoble Commissariat à l'Énergie Atomique et aux Énergies Alternatives Philips (France)STMicroelectronics (France)Institute for Atomic and Molecular Physics

About

L.F.Tz. Kwakman is an author at CEA Grenoble specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	575
2	Natural Sciences	3	3	138
3	Medicine	2	2	27
4	Education	1	1	20
5	Social Sciences	1	1	17

L.F.Tz. Kwakman

Publications

602

Citations

H-Index

Page 1

	Year	Citations
Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations L. Clément, R. Pantel, L.F.Tz. Kwakman, Applied Physics Letters Lamella PreparationsEngineeringMicroscopyElectron DiffractionCbed Patterns	2004	152
Local work function effects in the neutralization of alkali ions scattered from cesiated surfaces J.J.C. Geerlings, L.F.Tz. Kwakman, J. Los Surface Science Chemical EngineeringEngineeringIon ExchangeSurface ScienceApplied Physics	1987	102
H− Formation in proton-metal collisions J.J.C. Geerlings, P.W. van Amersfoort, L.F.Tz. Kwakman, Surface Science EngineeringNuclear PhysicsPhysicsHigh-energy Nuclear ReactionNatural Sciences	1985	86
Xe+ FIB Milling and Measurement of Amorphous Silicon Damage R.D. Kelley, Katherine Song, Bram van Leer, Microscopy and Microanalysis Xe+ Fib MillingEngineeringMicroscopyMechanical EngineeringSilicon On Insulator	2013	67
Formation of negative hydrogen ions on a cesiated W(110) surface; the influence of hydrogen implantation P.W. van Amersfoort, J.J.C. Geerlings, L.F.Tz. Kwakman, Journal of Applied Physics EngineeringNuclear PhysicsIon Beam InstrumentationChemistryPrimary Energy Ranges	1985	31
SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV M. Juhel, F. Laugier, D. Delille, Applied Surface Science Semiconductor TechnologyEngineeringPhysicsApplied PhysicsSims Depth Profiling	2006	23
Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation Jin Huang, Markus Loeffler, Uwe Muehle, Ultramicroscopy Materials EngineeringIon ImplantationEngineeringCrystalline DefectsApplied Physics	2017	22
Charge and energy transfer in collisions of Cs+ ions with a cesiated W(110) surface P.W. van Amersfoort, J.J.C. Geerlings, L.F.Tz. Kwakman, Journal of Applied Physics EngineeringNuclear PhysicsIon Beam InstrumentationCharge TransportIon Process	1985	21
In-line monitoring of advanced microelectronic processes using combined X-ray techniques C. Wyon, D. Delille, J. P. Gonchond, Thin Solid Films Electrical EngineeringSynchrotron RadiationX-ray SpectroscopyEngineeringCombined X-ray Techniques	2004	20
Lift-out techniques coupled with advanced TEM characterization methods for electrical failure analysis N. Bicaı̈is-Lépinay, Frederic André, R. Pantel, Microelectronics Reliability Electrical EngineeringReliability EngineeringEngineeringNondestructive TestingElectrical Failure Analysis	2002	18

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