Concepedia

J. J. Murray

JJ

Statistics

Publications

4

Citations

66

H-Index

4

Active since

1989

Affiliations

Nagoya Institute of Technology(Current)

Intel (United States)

University of California, Berkeley

J. J. Murray is an author at Nagoya Institute of Technology specializing in semiconductor materials, materials engineering, and materials science.

Publications per year

1989–1991

4

Publications

4

New mechanism for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition

Shinji Nozaki, J. J. Murray, A.T. Wu et al. · Applied Physics Letters · 1989 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +17

A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide

Emily Allen, J. J. Murray, Michael Deal et al. · Journal of The Electrochemical Society · 1991 · 18 citations

Engineering, Materials Engineering, Materials Science +14

Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate

Shinji Nozaki, A.T. Wu, J. J. Murray et al. · Applied Physics Letters · 1990 · 16 citations

Engineering, Materials Engineering, Materials Science +15

Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs

T. George, E. R. Weber, Shinji Nozaki et al. · Applied Physics Letters · 1989 · 11 citations

Engineering, Materials Engineering, Materials Science +17

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