Applied Physics Letters · 1989 · 21 citations · 3 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsCarrier TransportChemical Vapor DepositionEpitaxial GrowthSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsDiffusion In Semiconductor Thin FilmsGas TransportHeteroepitaxyHeterostructuresMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionSemiconductor HeterojunctionsTransport In Heterostructures
A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
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Defect-related Si diffusion in GaAs on Si
A. Freundlich, A. Leycuras, J. C. Grenet et al. · Applied Physics Letters · 1988 · 31 citations
Natural Sciences, Materials Engineering, Materials Science +17