A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide

Abstract

The diffusion behavior of ion‐implanted Sn, Ge, and Si in was investigated as a function of implant dose, temperature, and background doping. Sn and Ge were found to have diffusivities comparable to those of the same species introduced by doping during growth or from surface diffusion. The diffusivity of Si and to a lesser extent that of Ge was very sensitive to implant conditions, and both exhibit dose and time dependence. The different dose dependencies for the three Group IV dopants may indicate the effects of implant damage. Activation energies for diffusion were extracted for the three dopants. Transmission electron micrographs were examined and possible correlations between diffusion behavior and extended defect structure are made.