Ja-Soon Jang - Concepedia

Author

Ja-Soon Jang

Yeungnam University

Also Known As

Hwan-Hee Jeong, J. W. Jang, J.W. Jang, Ja-Soon Jang, Jinuk Jang, Jong‐Hyun Jang

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Yeungnam University Gwangju Institute of Science and Technology Korea University Sungkyunkwan University Chungnam National University

About

Ja-Soon Jang is an author at Yeungnam University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	34	1.2K
2	Applied Physics	20	33	1.2K
3	Chemistry	3	3	169
4	Chemical Engineering	2	2	23
5	Biomolecular Engineering	1	1	62

Ja-Soon Jang

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Low-resistance Pt/Ni/Au ohmic contacts to <i>p</i>-type GaN Ja-Soon Jang, In-Sik Chang, Han‐Ki Kim, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringMetallization SchemeEngineering	1999	153
Formation of low resistance Pt ohmic contacts to <i>p</i>-type GaN using two-step surface treatment Ja-Soon Jang, Seong-Ju Park, Tae‐Yeon Seong Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1999	112
Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN Ja-Soon Jang, Tae‐Yeon Seong Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2000	74
Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated <i>p</i>-GaN Ja-Soon Jang, Tae‐Yeon Seong Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsElectronic Devices	2000	69
Schottky barrier characteristics of Pt contacts to n-type InGaN Ja-Soon Jang, Donghwan Kim, Tae‐Yeon Seong Journal of Applied Physics Materials ScienceElectrical EngineeringTfe ModeEngineeringPhysics	2006	66
Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to <i>p</i>-GaN Ja-Soon Jang, Seong-Ju Park, Tae‐Yeon Seong Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringMetallization SchemeEngineering	2000	64
Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer M. Siva Pratap Reddy, Jung‐Hee Lee, Ja-Soon Jang Synthetic Metals EngineeringNanomaterialsNanotechnologyInterface StatesAu/bio-organic/n-gan Schottky Structures	2013	62
Ohmic contacts to <i>p</i>-type GaN using a Ni/Pt/Au metallization scheme Ja-Soon Jang, Kyung‐Hyun Park, Hong‐Kyu Jang, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceWide-bandgap SemiconductorEngineeringOhmic ContactSurface Science	1998	42
Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers Ja-Soon Jang, S. H. Pyun, Seung Hyun Lee, Applied Physics Letters Quantum PhotonicsEngineeringLaser ApplicationsOptoelectronic DevicesLuminescence Property	2004	38
Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy S. Sukrittanon, Y. J. Kuang, Alexandr Dobrovolsky, Applied Physics Letters Materials ScienceSemiconductorsGap NanowiresSemiconductor TechnologyEngineering	2014	38

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