Seong-Ju Park - Concepedia

Author

Seong-Ju Park

Gwangju Institute of Science and Technology

Also Known As

Seong-Ju Park

Publications

Citations

H-Index

Concepts

All Affiliations

Gwangju Institute of Science and Technology Electronics and Telecommunications Research Institute Korea Research Institute of Standards and Science Korea Basic Science Institute Seoul National University

About

Seong-Ju Park is an author at Gwangju Institute of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	46	2.9K
2	Applied Physics	29	46	2.9K
3	Chemistry	7	7	564
4	Chemical Engineering	3	3	101
5	Natural Sciences	2	2	265

Seong-Ju Park

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride Nae-Man Park, Chel‐Jong Choi, Tae‐Yeon Seong, Physical Review Letters EngineeringSilicon Nitride FilmSilicon On InsulatorSemiconductor NanostructuresNanoelectronics	2001	504
Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3 Tae‐Wook Kim, Chang‐Hee Cho, Baek-Hyun Kim, Applied Physics Letters EngineeringChemistrySilicon On InsulatorSemiconductor NanostructuresSi Qd	2006	243
Low-resistance Pt/Ni/Au ohmic contacts to <i>p</i>-type GaN Ja-Soon Jang, In-Sik Chang, Han‐Ki Kim, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringMetallization SchemeEngineering	1999	153
Dry etch damage in <i>n</i>-type GaN and its recovery by treatment with an N2 plasma Ji-Myon Lee, Ki-Myung Chang, Sang‐Woo Kim, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringDamage RecoveryEngineeringPhysics	2000	147
Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4 Baek-Hyun Kim, Chang‐Hee Cho, Tae‐Wook Kim, Applied Physics Letters PhotoluminescenceEngineeringNanotechnologyNanoelectronicsApplied Physics	2005	134
High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing Kyoung-Kook Kim, Shigeru Niki, Jin-Yong Oh, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringAl-doped N-zno EpilayerCrystal Growth Technology	2005	131
Formation of low resistance Pt ohmic contacts to <i>p</i>-type GaN using two-step surface treatment Ja-Soon Jang, Seong-Ju Park, Tae‐Yeon Seong Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1999	112
Formation of low resistance nonalloyed Al/Pt ohmic contacts on <i>n</i>-type ZnO epitaxial layer Han‐Ki Kim, Kyoung-Kook Kim, Seong-Ju Park, Journal of Applied Physics Aluminium NitrideEngineeringN-type ZnoNonalloyed Al/pt ContactMolecular Beam Epitaxy	2003	109
Fabrication of ZnO quantum dots embedded in an amorphous oxide layer Kyoung-Kook Kim, Nobuyuki Koguchi, Young‐Woo Ok, Applied Physics Letters EngineeringOptoelectronic DevicesZno QdsSemiconductor NanostructuresSemiconductors	2004	109
Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells Yong‐Tae Moon, Dong-Joon Kim, Keun-Man Song, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringNanoelectronicsCompound Semiconductor	2001	88

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