Applied Physics Letters · 1999 · 154 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingMetal-semiconductor ContactsMetalsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesContact FormationContact QualityContact ResistanceElectrical Contact ResistanceGallium Nitride (Gan) MaterialsMetallizationOhmic ConductionOhmic Contacts
We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017 cm−3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current–voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10−4 Ω cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere.
15
Very low resistance multilayer Ohmic contact to <i>n</i>-GaN
Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations
Low resistance ohmic contacts on wide band-gap GaN
Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations