Haigui Yang

Ohmic contact formation on n-type Ge by direct deposition of TiN

Masatoshi Iyota, Keisuke Yamamoto, Dong Wang et al. · Applied Physics Letters · 2011 · 46 citations

Engineering, Thin Film Process Technology, Chemical Deposition +18

Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

Haigui Yang, Dong Wang, Hiroshi Nakashima · Applied Physics Letters · 2009 · 31 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +20

High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO₂/GeO₂Bilayer Passivation

Keisuke Yamamoto, Ryuji Ueno, Takeshi Yamanaka et al. · Applied Physics Express · 2011 · 28 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +14

Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

Haigui Yang, Dong Wang, Hiroshi Nakashima et al. · Applied Physics Letters · 2008 · 27 citations

Bottom-channel Hole Mobility, Electrical Engineering, Semiconductor Device +13

Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO₂/GeO₂ Bilayer Passivation and Postmetallization Annealing Effect of Al

Kana Hirayama, Ryuji Ueno, Yoshiaki Iwamura et al. · Japanese Journal of Applied Physics · 2011 · 22 citations

Engineering, Ge Surface, Semiconductors +18