Kana Hirayama

High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO₂/GeO₂Bilayer Passivation

Keisuke Yamamoto, Ryuji Ueno, Takeshi Yamanaka et al. · Applied Physics Express · 2011 · 28 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +14

Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

Haigui Yang, Dong Wang, Hiroshi Nakashima et al. · Applied Physics Letters · 2008 · 27 citations

Bottom-channel Hole Mobility, Electrical Engineering, Semiconductor Device +13

Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO₂/GeO₂ Bilayer Passivation and Postmetallization Annealing Effect of Al

Kana Hirayama, Ryuji Ueno, Yoshiaki Iwamura et al. · Japanese Journal of Applied Physics · 2011 · 22 citations

Engineering, Ge Surface, Semiconductors +18

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation

Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto et al. · Applied Physics Letters · 2011 · 19 citations · Full text

Materials Engineering, Materials Science, Semiconductors +15

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Kana Hirayama, Keisuke Yoshino, Ryuji Ueno et al. · Solid-State Electronics · 2011 · 15 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +12