Jung-Yu Hsieh - Concepedia

Author

Jung-Yu Hsieh

Macronix International (Taiwan)

Also Known As

J. Y. HSIEH, J. Y. Hsieh, J.Y. Hsieh, Jung-Yu Hsieh, Justin Hsieh

Publications

457

Citations

H-Index

Concepts

All Affiliations

Macronix International (Taiwan)National Tsing Hua University National Institutes of Applied Research Southern Taiwan Science Park

About

Jung-Yu Hsieh is an author at Macronix International (Taiwan) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	278
2	Applied Physics	9	9	267
3	Social Sciences	1	1	10
4	Chemical Engineering	1	1	11
5	Chemistry	1	1	11

Jung-Yu Hsieh

Publications

394

Citations

H-Index

Page 1

	Year	Citations
A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device Hang-Ting Lue, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao,	2010	104
A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory Erh-Kun Lai, Hang-Ting Lue, Yi‐Hsuan Hsiao, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureBottom Layer	2006	70
A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET Tzu‐Hsuan Hsu, Hang-Ting Lue, Erh-Kun Lai, Non-volatile MemoryElectrical EngineeringEngineeringMicrofabricationNanoelectronics	2007	42
A High-Performance Body-Tied FinFET Bandgap Engineered SONOS (BE-SONOS) for nand-Type Flash Memory Tzu‐Hsuan Hsu, Hang-Ting Lue, Ya‐Chin King, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringNand-type Flash MemoryEngineeringMicrofabrication	2007	34
Understanding STI edge fringing field effect on the scaling of charge-trapping (CT) NAND Flash and modeling of incremental step pulse programming (ISPP) Hang-Ting Lue, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao, Device ModelingElectrical EngineeringField EffectEngineeringIncremental Step	2009	28
MA BE-SONOS: A Bandgap Engineered SONOS using Metal Gate and Al2O3 Blocking Layer to Overcome Erase Saturation Sheng-Chih Lai, Hang-Ting Lue, Ming-Jui Yang, Wide-bandgap SemiconductorEngineeringTunnel OxideIntegrated CircuitsBandgap Engineered Sonos	2007	25
Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application Tzu‐Hsuan Hsu, Hang-Ting Lue, Chih-Chang Hsieh, Non-volatile MemoryEngineeringEmerging Memory TechnologyIntegrated CircuitsNand Flash Application	2009	21
Physical and electrical characteristics of silicon oxynitride films with various refractive indices Jeng-Hwa Liao, Jung-Yu Hsieh, Hsing-Ju Lin, Journal of Physics D Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsVacuum Device	2009	20
Highly reliable 2-bit/cell nitride trapping flash memory using a novel array-nitride-sealing (ANS) ONO process Yen-Hao Shih, S.C. Lee, Hang-Ting Lue, Non-volatile MemoryEngineeringOno ProcessSemiconductor DeviceHardware Security	2006	17
A high-endurance (&#x226B;100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface Szu-Yu Wang, Hang-Ting Lue, Tzu‐Hsuan Hsu,	2010	12

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