Haruki Yokoyama - Concepedia

Author

Haruki Yokoyama

NTT (Japan)

Also Known As

Haruki YOKOYAMA, Haruki Yokoyama, Haruki Yokoyama Haruki Yokoyama, Yokoyama Haruki, Yokoyama, Haruki

168

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)NTT Basic Research Laboratories The University of Tokyo Tokyo Institute of Technology NTT (United States)

About

Haruki Yokoyama is an author at NTT (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	66	2.1K
2	Applied Physics	22	56	1.7K
3	Natural Sciences	2	2	31
4	Business	1	1	40
5	Chemical Engineering	1	1	16

Haruki Yokoyama

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature Safumi Suzuki, Masahiro Asada, Atsushi Teranishi, Applied Physics Letters Thz PhotonicsResonant Tunneling DiodesEngineeringTerahertz PhotonicsQuantum Engineering	2010	293
Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique Akiyoshi Chayahara, Haruki Yokoyama, Takeshi Imura, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringPlasma Cvd TechniqueBoron NitrideEngineering	1987	93
Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs T. Enoki, Haruki Yokoyama, Yohtaro Umeda, Japanese Journal of Applied Physics Electrical EngineeringElectronic DevicesEngineeringHigh-speed ElectronicsHigh-frequency Device	1998	93
Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers Masaki Okamoto, Haruki Yokoyama, Yukio Ôsaka Japanese Journal of Applied Physics EngineeringCubic Boron NitrideBoron Buffer LayersSilicon On InsulatorBorophene	1990	83
Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode Safumi Suzuki, Atsushi Teranishi, K. Hinata, Applied Physics Express Electrical EngineeringFundamental OscillationEngineeringMesa AreaPhysics	2009	75
Systematic Study of Insulator Deposition Effect (Si<sub>3</sub>N<sub>4</sub>, SiO<sub>2</sub>, AlN, and Al<sub>2</sub>O<sub>3</sub>) on Electrical Properties in AlGaN/GaN Heterostructures Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Japanese Journal of Applied Physics SemiconductorsOxide HeterostructuresElectrical EngineeringMaterials ScienceSystematic Study	2007	74
Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Journal of Lightwave Technology Electrical EngineeringEngineeringInverted P-down StructureRf SemiconductorElectronic Engineering	2014	65
Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors Tetsuya Suemitsu, T. Enoki, Haruki Yokoyama, Japanese Journal of Applied Physics Semiconductor TechnologyElectron DensityElectrical EngineeringEngineeringImproved Recessed-gate Structure	1998	56
Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition Haruki Yokoyama, Masaki Okamoto, Yukio Ôsaka Japanese Journal of Applied Physics EngineeringNegative Self-biasCubic Boron NitrideHexagonal Bn PhaseVacuum Device	1991	52
30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency Tetsuya Suemitsu, T. Ishii, Haruki Yokoyama, Japanese Journal of Applied Physics Electrical EngineeringEngineeringGhz Cutoff FrequencyRecord Cutoff FrequencyHigh-frequency Device	1999	50

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