Haruki Yokoyama

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Safumi Suzuki, Masahiro Asada, Atsushi Teranishi et al. · Applied Physics Letters · 2010 · 293 citations

Thz Photonics, Resonant Tunneling Diodes, Engineering +16

Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique

Akiyoshi Chayahara, Haruki Yokoyama, Takeshi Imura et al. · Japanese Journal of Applied Physics · 1987 · 93 citations

Materials Science, Materials Engineering, Plasma Cvd Technique +14

Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs

T. Enoki, Haruki Yokoyama, Yohtaro Umeda et al. · Japanese Journal of Applied Physics · 1998 · 93 citations

Electrical Engineering, Electronic Devices, Engineering +12

Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers

Masaki Okamoto, Haruki Yokoyama, Yukio Ôsaka · Japanese Journal of Applied Physics · 1990 · 83 citations

Engineering, Cubic Boron Nitride, Boron Buffer Layers +17

Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode

Safumi Suzuki, Atsushi Teranishi, K. Hinata et al. · Applied Physics Express · 2009 · 75 citations

Electrical Engineering, Fundamental Oscillation, Engineering +10