Formation of Cubic Boron Nitride Film on Si with Boron Buffer Layers

Abstract

The c-BN (cubic BN)/BN X /B/Si structure was formed using plasma CVD techniques. In contrast with the direct growth of c-BN films, the adherence of the structure on Si was entirely satisfactory. The characterization of buffer layers (BN ( X =0.6) , BN ( X =0.3) , B) by X-ray photoelectron, infrared absorption spectroscopies and internal stress measurements show that the c-BN/BN X /B/Si structure is useful as a mechanically stable passivation film.